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RMPA2455

更新时间: 2024-02-11 10:16:10
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 射频和微波射频放大器微波放大器功率放大器
页数 文件大小 规格书
10页 588K
描述
2.4-2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier

RMPA2455 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:3 X 3 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, LEADLESS PACKAGE-16
Reach Compliance Code:unknown风险等级:5.71
Is Samacsys:N特性阻抗:50 Ω
构造:COMPONENT增益:30 dB
最大输入功率 (CW):10 dBmJESD-609代码:e3
最大工作频率:2500 MHz最小工作频率:2400 MHz
最高工作温度:85 °C最低工作温度:-40 °C
射频/微波设备类型:NARROW BAND MEDIUM POWER端子面层:MATTE TIN
Base Number Matches:1

RMPA2455 数据手册

 浏览型号RMPA2455的Datasheet PDF文件第2页浏览型号RMPA2455的Datasheet PDF文件第3页浏览型号RMPA2455的Datasheet PDF文件第4页浏览型号RMPA2455的Datasheet PDF文件第5页浏览型号RMPA2455的Datasheet PDF文件第6页浏览型号RMPA2455的Datasheet PDF文件第7页 
September 2005  
RMPA2455  
2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier  
Features  
General Description  
30 dB small signal gain  
The RMPA2455 power amplifier is designed for high  
performance WLAN access point applications in the 2.4–2.5  
GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm  
package with internal matching on both input and output to 50Ω  
minimizes next level PCB space and allows for simplified  
integration. The on-chip detector provides power sensing  
capability while the logic control provides power saving  
shutdown options. The PA’s low power consumption and  
excellent linearity are achieved using our InGaP Heterojunction  
Bipolar Transistor (HBT) technology.  
30 dBm output power @ 1 dB compression  
3% EVM at 22 dBm modulated power out  
5.0 V positive collector supply operation  
Two power saving shutdown options (bias and logic control)  
Integrated power detector with 20 dB dynamic range  
RoHS compliant low profile 16 pin 3 x 3 x 0.9 mm leadless  
package  
Internally matched to 50and DC blocked RF input/output  
Optimized for use in 802.11b/g Access Point applications  
Device  
1
Electrical Characteristics 802.11g OFDM Modulation  
(with 176 ms burst time, 100 ms idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth  
Parameter  
Min  
2.4  
Typ  
Max  
2.5  
Units  
GHz  
V
Frequency  
Collector Supply Voltage  
Mirror Supply Voltage  
Gain  
4.5  
5.0  
3.3  
30  
5.5  
2.8  
3.6  
V
dB  
Total Current @ 22dBm P  
195  
3.0  
960  
4
mA  
%
OUT  
2
EVM @ 22dBm P  
OUT  
Detector Output @ 22dBm P  
mV  
dBm  
OUT  
3
Detector Threshold  
Notes:  
1. VC1, VC2 = 5.0 Volts, VM12 = 3.3V, T = 25°C, PA is constantly biased, 50system.  
A
2. Percentage includes system noise floor of EVM = 0.8%.  
3. P  
measured at P corresponding to power detection threshold.  
IN  
OUT  
©2005 Fairchild Semiconductor Corporation  
RMPA2455 Rev. F  
1
www.fairchildsemi.com  

RMPA2455 替代型号

型号 品牌 替代类型 描述 数据表
RMPA2453 FAIRCHILD

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2.4?2.5 GHz InGaP HBT Linear Power Amplifier

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