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RMPA2550

更新时间： 2024-09-27 22:23:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器功率放大器
页数 文件大小 规格书
14页 837K
描述
2.4-2.5 GHz and 5.15-5.85 GHz Dual Band InGaP HBT Linear Power Amplifier

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RMPA2550 数据手册

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August 2004  
RMPA2550  
2.4–2.5 GHz and 5.15–5.85 GHz Dual Band InGaP HBT Linear Power Amplifier  
• 27 dB modulated gain 5.15 to 5.85 GHz band  
General Description  
• 26 dBm output power @ 1 dB compression both  
The RMPA2550 is a dual frequency band power amplifier  
frequency bands  
designed for high performance WLAN applications in the  
• 2.0% EVM at 18 dBm modulated Pout, 2.45 GHz  
2.4-2.5 GHz and the 5.15-5.85 GHz frequency bands. The  
• 2.3% EVM at 18 dBm modulated Pout, 5.45 GHz  
single low profile 20 pin 3 x 4 x 0.9 mm package with  
• 3.3 V single positive supply operation  
internal matching on both input and output to 50Ω  
minimizes next level PCB space and allows for simplified  
integration. The two on-chip detectors provide power  
sensing capability while the logic control provides power  
saving shutdown options. The PA’s low power consumption  
and excellent linearity are achieved using our InGaP  
Heterojunction Bipolar Transistor (HBT) technology.  
• Adjustable bias current operation  
• Two power saving shutdown options (bias and logic  
control)  
• Separate integrated power detectors with 20 dB dynamic  
range  
• Low profile 20 pin, 3 x 4 x 0.9 mm standard  
QFN leadless package  
Device  
• Internally matched to 50 ohms  
• Optimized for use in 802.11a/b/g  
applications  
Features  
• Dual band operation in a single package design  
• 26 dB modulated gain 2.4 to 2.5 GHz band  
1,3  
Electrical Characteristics 802.11g/a OFDM  
Modulation (with 176 µs burst time, 100µs idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth  
Parameter  
Minimum Typical Maximum  
Minimum Typical Maximum  
Unit  
GHz  
V
Frequency  
2.4  
3.0  
2.5  
3.6  
28  
5.15  
3.0  
5.85  
3.6  
29  
Supply Voltage  
Gain  
3.3  
26  
3.3  
27  
24.5  
25.5  
dB  
Total Current @ 18dBm P  
150  
157  
2.0  
182  
189  
2.5  
3.5  
600  
7.0  
228  
235  
2.5  
260  
267  
3.5  
4.5  
865  
7.0  
mA  
mA  
%
OUT  
OUT  
Total Current @ 19dBm P  
2
EVM @ 18dBm P  
EVM @ 19dBm P  
OUT  
OUT  
2
3.0  
3.5  
%
Detector Output @ 19dBm P  
508  
5.0  
780  
5.0  
mV  
dBm  
dBm  
OUT  
4
Detector Threshold  
5,7  
P
Spectral Mask Compliance  
21.0  
21.0  
OUT  
3,6  
Electrical Characteristics 802.11b CCK  
Modulation (RF not framed) 11Mbps Data Rate, 22.0 MHz Bandwidth  
Parameter  
Minimum Typical Maximum  
Unit  
GHz  
V
Frequency  
Supply Voltage  
Gain  
2.4  
3.0  
2.5  
3.6  
28  
3.3  
26  
24.5  
dB  
Total Current  
250  
mA  
dBc  
dBc  
dBm  
First Sidelobe Power  
-40  
-55  
Second Sidelobe Power  
7
Max P  
Spectral Mask Compliance  
24.0  
OUT  
Notes:  
1: VC1 2.4 ,VC2 2.4, VM 2.4, VC1 5.0, VC2 5.0, VC3 5.0, VM13 5.0, VM2 5.0 = 3.3 Volts, T=25°C, PA is constantly biased, 50Ω system. VL adjusted for either 2.4  
or 5 GHz operation.  
2: Percentage includes system noise floor of EVM=0.8%.  
3: Not measured 100% in production.  
4: P  
measured at P corresponding to power detection threshold.  
IN  
OUT  
5: Measured at P at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.  
IN  
6: VC1 2.4, VC2 2.4, VM 2.4 = 3.3 Volts, T=25°C, P  
=+23 dBm, 50Ω system. Satisfies spectral mask.  
OUT  
7: P is adjusted to point where performance approaches spectral mask requirements.  
IN  
©2004 Fairchild Semiconductor Corporation  
RMPA2550 Rev. D  
1234567...14

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