Datasheet > RMPA2266

RMPA2266

更新时间： 2024-11-04 03:36:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器
页数	文件大小	规格书
7页	199K
描述
WCDMA Band I Power Amplifier Module

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中文翻译

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技术参数
数据手册

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RMPA2266 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.7
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	20 dB	最大输入功率 (CW)：	10 dBm
最大工作频率：	1980 MHz	最小工作频率：	1920 MHz
最高工作温度：	85 °C	最低工作温度：	-30 °C
射频/微波设备类型：	NARROW BAND LOW POWER	最大电压驻波比：	2.5
Base Number Matches：	1

RMPA2266 数据手册

PRELIMINARY

April 2007

RMPA2266 i-Lo™

WCDMA Band I Power Ampliﬁer Module

Features

General Description

■ 40% WCDMA efﬁciency at +28dBm Pout

The RMPA2266 Power Ampliﬁer Module (PAM) is

Fairchild’s latest innovation in 50Ω matched, surface

mount modules targeting UMTS/WCDMA/HSDPA

applications. Answering the call for ultra-low DC power

consumption and extended battery life in portable

electronics, the RMPA2266 uses novel proprietary

circuitry to dramatically reduce ampliﬁer current at low to

medium RF output power levels (< +16dBm), where the

handset most often operates. A simple two-state Vmode

control is all that is needed to reduce operating current

by more than 60% at 16dBm output power, and

quiescent current (Iccq) by as much as 70% compared

to traditional power-saving methods. No additional

circuitry, such as DC-to-DC converters, are required to

achieve this remarkable improvement in ampliﬁer

efﬁciency. Further, the 4 x 4 x 1.0mm LCC package is

pin-compatible and a drop-in replacement for last

generation 4 x 4mm PAMs widely used today, minimizing

the design time to apply this performance-enhancing

technology. The multi-stage GaAs Microwave Monolithic

Integrated Circuit (MMIC) is manufactured using

Fairchild RF’s InGaP Heterojunction Bipolar Transistor

(HBT) process.

■ 20% WCDMA efﬁciency (58mA total current) at

+16dBm Pout

■ Low quiescent current (Iccq): 25mA in low-power

mode

■ Meets UMTS/WCDMA performance requirements

■ Meets HSDPA performance requirements

■ Single positive-supply operation with low power and

shutdown modes

– 3.4V typical Vcc operation

– Low Vref (2.85V) compatible with advanced handset

chipsets

■ Compact Lead-free compliant LCC package –

(4.0 x 4.0 x 1.0mm nominal)

■ Industry standard pinout

■ Internally matched to 50Ω and DC blocked RF

input/output

Functional Block Diagram

(Top View)

MMIC

Vcc1

Vcc2

GND

INPUT

MATCH

RF IN

GND

OUTPUT

MATCH

RF OUT

GND

Vmode

Vref

BIAS/MODE SWITCH

GND

11 (paddle ground on package bottom)

www.fairchildsemi.com

RMPA2266 i-Lo™ Rev. D

12 3 4 5 6 7

中文翻译

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与RMPA2266相关器件

型号	品牌	获取价格	描述	数据表
RMPA2271	FAIRCHILD	获取价格	WCDMA/UMTS Power Edge Power Amplifier Module with Integrated Power Detector
RMPA2450	FAIRCHILD	获取价格	2.4-2.5 GHz GaAs MMIC Power Amplifier
RMPA2451	FAIRCHILD	获取价格	2.4?2.5 GHz GaAs MMIC Power Amplifier
RMPA2451-TB	FAIRCHILD	获取价格	2.4?2.5 GHz GaAs MMIC Power Amplifier
RMPA2453	FAIRCHILD	获取价格	2.4?2.5 GHz InGaP HBT Linear Power Amplifier
RMPA2455	FAIRCHILD	获取价格	2.4-2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
RMPA2456	FAIRCHILD	获取价格	2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier
RMPA2458	FAIRCHILD	获取价格	2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier
RMPA2458_059	FAIRCHILD	获取价格	2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier
RMPA2550	FAIRCHILD	获取价格	2.4-2.5 GHz and 5.15-5.85 GHz Dual Band InGaP HBT Linear Power Amplifier

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