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RMPA2271 PDF预览

RMPA2271

更新时间: 2024-11-03 21:54:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器功率放大器
页数 文件大小 规格书
9页 373K
描述
WCDMA/UMTS Power Edge Power Amplifier Module with Integrated Power Detector

RMPA2271 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.84
特性阻抗:50 Ω构造:COMPONENT
增益:26 dB最大输入功率 (CW):10 dBm
最大工作频率:1980 MHz最小工作频率:1920 MHz
最高工作温度:85 °C最低工作温度:-30 °C
射频/微波设备类型:NARROW BAND LOW POWER最大电压驻波比:2
Base Number Matches:1

RMPA2271 数据手册

 浏览型号RMPA2271的Datasheet PDF文件第2页浏览型号RMPA2271的Datasheet PDF文件第3页浏览型号RMPA2271的Datasheet PDF文件第4页浏览型号RMPA2271的Datasheet PDF文件第5页浏览型号RMPA2271的Datasheet PDF文件第6页浏览型号RMPA2271的Datasheet PDF文件第7页 
PRELIMINARY  
May 2005  
RMPA2271  
WCDMA/UMTS Power Edge™ Power Amplifier  
Module with Integrated Power Detector  
Features  
General Description  
Temperature compensated, integrated power detector with  
>20dB dynamic range  
The RMPA2271 Power Amplifier Module (PAM) is Fairchild’s  
latest innovation in 50matched, surface mount modules  
targeting WCDMA/UMTS applications. Answering the call for  
integrated Power Detection, the RMPA2271 offers the ability to  
41% WCDMA efficiency at +28dBm average output power  
1920–1980MHz  
measure power output over  
a 20dB range. This feature  
Meets UMTS/WCDMA and HSDPA performance  
eliminates the need of an external power detector and lossy  
directional coupler, improving system perfomance and reducing  
overall cost. Simple two-state Vmode control is all that is  
needed to change the PA optimization from high power to low  
power mode to minimize current usage. The 3 x 3 x 1.0mm LCC  
package fits into the tightest spaces available on handset  
boards and is footprint compatible with existing 3 x 3mm LCC  
power amplifiers. The multi-stage GaAs Microwave Monolithic  
Integrated Circuit (MMIC) is manufactured using Fairchild’s  
InGaP Heterojunction Bipolar Transistor (HBT) process.  
requirements  
Compact Lead-free compliant LCC package–  
(3.0 x 3.0 x 1.0 mm nominal)  
Single positive-supply operation and low power and  
shutdown modes  
Low Vref (2.85V) compatible with advanced handset  
chipsets  
Internally matched to 50and DC blocked RF  
input/output  
Device  
Functional Block Diagram  
MMIC  
8
Vcc2  
Vcc1  
RF IN  
1
Input  
Output  
Match  
RF OUT  
GND  
7
2
Match  
Vmode  
6
3
DC Bias Control  
Power Detector  
Pdet  
5
4
Vref  
©2005 Fairchild Semiconductor Corporation  
RMPA2271 Rev. B  
1
www.fairchildsemi.com  

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