Datasheet > RFP2P10

RFP2P10

更新时间： 2024-11-11 22:43:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
5页	43K
描述
-2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs

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RFP2P10 数据手册

RFP2P08, RFP2P10

Semiconductor

Data Sheet

October 1998

File Number 2870.1

-2A, -80V and -100V, 3.500 Ohm,

P-Channel Power MOSFETs

Features

• -2A, -80V and -100V

These are P-Channel enhancement mode silicon gate

power ﬁeld effect transistors designed for applications such

as switching regulators, switching converters. motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

• r

= 3.500Ω

DS(ON)

[ /Title

(RFP2P

08,

RFP2P

10)

/Sub-

ject (-

2A, -

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Symbol

Formerly developmental type TA_____.

Ordering Information

80V

and -

PART NUMBER

PACKAGE

TO-220AB

BRAND

RFP2P08

RFP2P10

RFP2P08

100V,

3.500

Ohm,

P-Chan-

nel

RFP2P10

NOTE: When ordering, use entire part number.

Packaging

Power

MOS-

FETs)

/Author

()

TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

/Key-

words

(Harris

Semi-

conduc-

tor,

P-Chan-

nel

Power

MOS-

FETs,

TO-

220AB)

/Cre-

ator ()

/DOCI

NFO

pdf-

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

12 3 4 5

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