RFP3055LE_NL

更新时间： 2024-11-26 13:12:55

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数据手册

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RFP3055LE_NL 数据手册

RFD3055, RFD3055SM, RFP3055

Data Sheet

January 2002

12A, 60V, 0.150 Ohm, N-Channel Power

MOSFETs

Features

• 12A, 60V

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speciﬁed level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. These types can be operated directly

from integrated circuits.

• r

DS(ON)

= 0.150Ω

• Temperature Compensating PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175 C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA49082.

Symbol

Ordering Information

PART NUMBER

PACKAGE

BRAND

FD3055

RFD3055

TO-251AA

RFD3055SM

RFP3055

TO-252AA

TO-220AB

FD3055

FP3055

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A,

to obtain the TO-252AA variant in tape and reel, i.e. RFD3055SM9A.

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

SOURCE

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

RFD3055, RFD3055SM, RFP3055 Rev. B

12 3 4 5 6 7 8

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