Datasheet > RFP30N06LE

RFP30N06LE

更新时间： 2024-09-23 22:43:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
8页	84K
描述
30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

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RFP30N06LE 数据手册

RFP30N06LE, RF1S30N06LESM

Data Sheet

April 1999

File Number 3629.2

30A, 60V, ESD Rated, 0.047 Ohm, Logic

Level N-Channel Power MOSFETs

Features

• 30A, 60V

[ /Title These are N-Channel power MOSFETs manufactured using

• r

= 0.047Ω

DS(ON)

the MegaFET process. This process, which uses feature

(RFP3

0N06L

RF1S3

• 2kV ESD Protected

sizes approaching those of LSI integrated circuits gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

• Temperature Compensating PSPICE™ Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

0N06L

ESM)

/Sub-

ject

drivers and relay drivers. These transistors can be operated

directly from integrated circuits.

• Related Literature

These transistors incorporate ESD protection and are

designed to withstand 2kV (Human Body Model) of ESD.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

(30A,

60V,

ESD

Formerly developmental type TA49027.

Symbol

Ordering Information

Rated,

0.047

Ohm,

Logic

Level

N-

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

F30N06LE

1S30N06L

RFP30N06LE

RF1S30N06LESM

NOTE: When ordering use the entire part number. Add sufﬁx, 9A, to

obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.

Chan-

nel

Power

MOS-

FETs)

/Autho

r ()

/Key-

words

(Inter-

sil

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

GATE

DRAIN (FLANGE)

SOURCE

Corpo-

ration,

ESD

Rated,

0.047

Ohm,

Logic

Level

N-

Chan-

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE™ is a trademark of MicroSim Corporation.

6-260

12 3 4 5 6 7 8

中文翻译

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RFP30N06LE 替代型号

型号	品牌	替代类型	描述	数据表
RFP50N06	ONSEMI	功能相似	N 沟道，功率 MOSFET，60V，50A，22mΩ
RFP12N10L	ONSEMI	功能相似	N 沟道，逻辑电平，功率 MOSFET，100V，12A，200mΩ
SPW47N60C3	INFINEON	功能相似	Cool MOS™ Power Transistor

与RFP30N06LE相关器件

型号	品牌	获取价格	描述	数据表
RFP30N06LE_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Met
RFP-30N50T	ANAREN	获取价格	RF/Microwave Termination, 0MHz Min, 4000MHz Max, 50ohm
RFP-30N50T-S	ANAREN	获取价格	Aluminum Nitride Termination 30 Watts, 50W
RFP30P05	INTERSIL	获取价格	30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs
RFP30P06	INTERSIL	获取价格	30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs
RFP-375375-6X50-2	ANAREN	获取价格	Chip Terminations 300 Watts, 50ohm
RFP-375375-6Y100-2	ANAREN	获取价格	RF/Microwave Termination, 0MHz Min, 1500MHz Max, SURFACE MOUNT PACKAGE-2
RFP-375375-6Z50-2	ANAREN	获取价格	Surface Mount Terminations 30 Watts, 50ohm
RFP-375375A4Z50	ANAREN	获取价格	RF/Microwave Termination, 0MHz Min, 2500MHz Max, 50ohm, ALUMINUM CERAMIC, SURFACE MOUNT PA
RFP-375375N6X50-2	ANAREN	获取价格	Aluminum Nitride Terminations

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