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RFP2N12 PDF预览

RFP2N12

更新时间: 2024-11-11 22:43:59
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
5页 39K
描述
2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs

RFP2N12 数据手册

 浏览型号RFP2N12的Datasheet PDF文件第2页浏览型号RFP2N12的Datasheet PDF文件第3页浏览型号RFP2N12的Datasheet PDF文件第4页浏览型号RFP2N12的Datasheet PDF文件第5页 
RFP2N12,  
RFP2N15  
Semiconductor  
2A, 120V and 150V, 1.750 Ohm,  
N-Channel Power MOSFETs  
September 1998  
Features  
Description  
• 2A, 120V and 150V  
These are N-Channel enhancement mode silicon gate  
power field effect transistors designed for applications such  
as switching regulators, switching converters, motor drivers,  
relay drivers and drivers for high power bipolar switching  
transistors requiring high speed and low gate drive power.  
These types can be operated directly from integrated cir-  
cuits.  
• r  
DS(ON)  
= 1.750  
[ /Title  
(RFP2N  
12,  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
RFP2N1  
5)  
/Subject  
(2A,  
120V  
and  
Formerly developmental type TA09196.  
Ordering Information  
PART NUMBER  
RFP2N12  
RFP2N15  
PACKAGE  
TO-220AB  
BRAND  
RFP2N12  
RFP2N15  
Symbol  
TO-220AB  
D
150V,  
1.75  
NOTE: When ordering, include the entire part number.  
Ohm, N-  
Channel  
Power  
MOS-  
FETs)  
/Author  
()  
G
S
/Key-  
Packaging  
words  
(Harris  
Semi-  
conduc-  
tor, N-  
Channel  
Power  
MOS-  
FETs,  
TO-  
JEDEL TO-220AB  
SOURCE  
DRAIN  
GATE  
DRAIN  
(FLANGE)  
220AB)  
/Creator  
()  
/DOCIN  
FO pdf-  
mark  
[ /Page-  
Mode  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  
File Number 2882.1  
Copyright © Harris Corporation 1998  
5-1  

RFP2N12 替代型号

型号 品牌 替代类型 描述 数据表
STP4N20 STMICROELECTRONICS

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