Datasheet > Q67000-S116

Q67000-S116

更新时间： 2024-09-08 22:44:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
6页	285K
描述
SIPMOS Small-Signal Transistor(N channel Depletion mode High dynamic resistance)

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数据手册

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Q67000-S116 数据手册

SIPMOS Small-Signal Transistor

BSS 129

● V_DS

● I_D

240 V

0.15 A

● R_DS(on)20 Ω

● N channel

● Depletion mode

● High dynamic resistance

● Available grouped in V_GS(th)

Type

Ordering

Code

Tape and Reel

Information

Pin Configuration Marking Package

BSS 129 Q62702-S015 E6288: 1500 pcs/reel;

2 reels/carton; gate first

SS 129

TO-92

BSS 129 Q67000-S116 E6296: 1500 pcs/reel;

2 reels/carton; source first

Maximum Ratings

Parameter

Symbol

V_DS

Values

240

Unit

Drain-source voltage

Drain-gate voltage, R_GS= 20 kΩ

Gate-source voltage

V_DGR

V_GS

240

± 14

± 20

0.15

0.45

1.0

Gate-source peak voltage, aperiodic

Continuous drain current, T_A= 37 ˚C

V_gs

I_D

Pulsed drain current,

T_A= 25 ˚C

I_{D puls}

P_tot

Max. power dissipation,

˚C

Operating and storage temperature range

T_j, T_stg

– 55 … + 150

Thermal resistance, chip-ambient

(without heat sink)

R_thJA

≤ 125

K/W

–

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

–

55/150/56

Semiconductor Group

04.97

12 3 4 5 6

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