Datasheet > Q67000-S118

Q67000-S118

更新时间： 2024-09-08 22:44:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
7页	78K
描述
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

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中文翻译

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数据手册

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Q67000-S118 数据手册

BSS 297

SIPMOS Small-Signal Transistor

• N channel

• Enhancement mode

• Logic Level

• V

= 0.8...2.0V

GS(th)

Pin 1

Pin 2

Pin 3

Type

Package

Marking

DS(on)

Ω

BSS 297

200 V

0.48 A

TO-92

SS 297

Type

BSS 297

Ordering Code

Q67000-S118

Q67000-S292

Tape and Reel Information

E6288

E6325

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

Drain-gate voltage

200

DGR

Ω

= 20 k

200

Gate source voltage

± 14

Gate-source peak voltage,aperiodic

Continuous drain current

T = 25 °C

0.48

1.92

DC drain current, pulsed

Dpuls

T = 25 °C

Power dissipation

tot

T = 25 °C

Semiconductor Group

12/05/1997

12 3 4 5 6 7

中文翻译

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