Datasheet > Q67000-S200

Q67000-S200

更新时间： 2024-09-13 22:44:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	172K
描述
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)

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中文翻译

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数据手册

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Q67000-S200 数据手册

BSP 298

SIPMOS Small-Signal Transistor

• N channel

• Enhancement mode

• Avalanche rated

• V

= 2.1 ... 4.0 V

GS(th)

Pin 1 Pin 2 Pin 3 Pin 4

Type

DS(on)

Package

Marking

BSP 298

400 V

0.5 A

3 Ω

SOT-223

BSP 298

Type

Ordering Code

Tape and Reel Information

BSP 298

Q67000-S200

E6327

Maximum Ratings

Parameter

Symbol

Values

0.5

Unit

Continuous drain current

T = 26 °C

DC drain current, pulsed

Dpuls

T = 25 °C

Avalanche energy, single pulse

Ω

I = 1.35 A, V = 50 V, R = 25

L = 125 mH, T = 25 °C

130

Gate source voltage

Power dissipation

± 20

tot

T = 25 °C

1.8

Semiconductor Group

Sep-12-1996

12 3 4 5 6 7...9

中文翻译

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