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PSMN013-100ES

更新时间： 2024-01-16 13:32:53

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
14页	213K
描述
N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK

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PSMN013-100ES 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.71	Base Number Matches：	1

PSMN013-100ES 数据手册

PSMN013-100ES

N-channel 100 V 13.9 mΩ standard level MOSFET in I2PAK

Rev. 02 — 19 February 2010

Objective data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C.

This product is designed and qualified for use in a wide range of industrial,

communications and domestic equipment.

1.2 Features and benefits

Low conduction losses due to low

Suitable for high frequency

applications due to fast switching

characteristics

on-state resistance

1.3 Applications

DC-to-DC converters

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

Min

Typ

Max Unit

V_DS

I_D

100

drain current

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

170

175

T_j

junction temperature

-55

°C

Avalanche ruggedness

E_DS(AL)Snon-repetitive

drain-source

V_GS= 10 V; T_j(init)= 25 °C;

I_D= 68 A; V_sup≤ 100 V;

unclamped; R_GS= 50 Ω

127

avalanche energy

Dynamic characteristics

Q_GD

gate-drain charge

V_GS= 10 V; I_D= 25 A;

V_DS= 50 V;

see Figure 14 and 13

Q_G(tot)

total gate charge

V_GS= 10 V; I_D= 25 A;

V_DS= 50 V;

see Figure 13 and 14

12 3 4 5 6 7...14

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