Datasheet > PMV50EPEA

PMV50EPEA

更新时间： 2024-11-07 11:11:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
16页	720K
描述
30 V, P-channel Trench MOSFETProduction

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PMV50EPEA 数据手册

PMV50EPEA

30 V, P-channel Trench MOSFET

30 June 2016

Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

Logic level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

•

3. Applications

Relay driver

•

High-speed line driver

High-side loadswitch

Switching circuits

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

-30

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-20

V_GS= -10 V; T_amb= 25 °C

[1]

-4.2

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= -10 V; I_D= -4.2 A; T_j= 25 °C

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm².

12 3 4 5 6 7...16

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