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PMDPB55XPA PDF预览

PMDPB55XPA

更新时间: 2024-09-13 17:15:35
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
16页 314K
描述
20 V, dual P-channel Trench MOSFETProduction

PMDPB55XPA 数据手册

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PMDPB55XPA  
20 V, dual P-channel Trench MOSFET  
18 March 2024  
Product data sheet  
1. General description  
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin  
DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET  
technology.  
2. Features and benefits  
Low threshold voltage  
Very fast switching  
Trench MOSFET technology  
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm  
Exposed drain pad for excellent thermal conduction  
AEC-Q101 qualified  
3. Applications  
DC to DC conversion  
High-speed line driver  
High-side load switch  
Switching circuits  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VDS  
VGS  
ID  
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-
-
-
-20  
10  
V
V
A
-10  
-
VGS = -4.5 V; Tamb = 25 °C  
VGS = -4.5 V; ID = -3.6 A; Tj = 25 °C  
[1]  
-3.6  
Static characteristics (per transistor)  
RDSon  
drain-source on-state  
resistance  
-
50  
66  
mΩ  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.  
 
 
 
 
 

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