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PMDPB56XNEA

更新时间: 2024-09-12 21:00:03
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
17页 251K
描述
Small Signal Field-Effect Transistor

PMDPB56XNEA 技术参数

生命周期:Transferred包装说明:,
Reach Compliance Code:unknown风险等级:5.7
Base Number Matches:1

PMDPB56XNEA 数据手册

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PMDPB56XNEA  
30 V, dual N-channel Trench MOSFET  
19 April 2016  
Product data sheet  
1. General description  
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless  
DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench  
MOSFET technology.  
2. Features and benefits  
Trench MOSFET technology  
Low threshold voltage  
Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm  
Tin-plated 100 % solderable side pads for optical solder inspection  
ElectroStatic Discharge (ESD) protection > 2 kV HBM  
AEC-Q101 qualified  
3. Applications  
LED driver  
Power management  
Low-side loadswitch  
Switching circuits  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VDS  
VGS  
ID  
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-
-
-
30  
12  
3.1  
V
V
A
-12  
-
VGS = 4.5 V; Tamb = 25 °C  
[1]  
Static characteristics (per transistor)  
RDSon  
drain-source on-state  
resistance  
VGS = 4.5 V; ID = 3.1 A; Tj = 25 °C  
-
55  
72  
mΩ  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for  
drain 6 cm2.  
Scan or click this QR code to view the latest information for this product  
 
 
 
 
 

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