Datasheet > PMDPB85UPE

PMDPB85UPE

更新时间： 2024-09-15 12:32:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	884K
描述
20 V dual P-channel Trench MOSFET

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PMDPB85UPE 数据手册

PMDPB85UPE

DFN2020-6

20 V dual P-channel Trench MOSFET

Rev. 1 — 20 June 2012

Product data sheet

1. Product profile

1.1 General description

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a

leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic

package using Trench MOSFET technology.

1.2 Features and benefits

 Low threshold voltage

 Very fast switching

 Trench MOSFET technology

 2 kV ElectroStatic Discharge (ESD)

protection

1.3 Applications

 Relay driver

 High-side load switch

 Switching circuits

 High-speed line driver

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-20

-8

[1]

V_GS= -4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= -4.5 V; I_D= -1.3 A; T_j= 25 °C

-3.7

Static characteristics (per transistor)

R_DSon

drain-source on-state

resistance

103

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².

12 3 4 5 6 7...15

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