Datasheet > PMDPB95XNE2

PMDPB95XNE2

更新时间： 2024-09-16 11:14:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	720K
描述
30 V, dual N-channel Trench MOSFETProduction

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PMDPB95XNE2 数据手册

PMDPB95XNE2

30 V, dual N-channel Trench MOSFET

14 June 2016

Product data sheet

1. General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless

DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

Very fast switching

Trench MOSFET technology

Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm

Exposed drain pad for excellent thermal conduction

EletroStatic Discharge (ESD) protection > 2 kV HBM

•

3. Applications

Charging switch for portable devices

DC-to-DC converters

Small brushless DC motor drive

Power management in battery-driven portables

Hard disk and computing power management

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-12

V_GS= 4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= 4.5 V; I_D= 2.8 A; T_j= 25 °C

[1]

Static characteristics (per transistor)

R_DSon

drain-source on-state

resistance

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm².

12 3 4 5 6 7...15

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