Datasheet > PMDPB70XP

PMDPB70XP

更新时间： 2024-09-16 11:15:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	1720K
描述
30 V, dual P-channel Trench MOSFETProduction

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PMDPB70XP 数据手册

PMDPB70XP

30 V, dual P-channel Trench MOSFET

Rev. 1 — 9 March 2012

Product data sheet

1. Product profile

1.1 General description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless

ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

1.2 Features and benefits

 Very fast switching

 Small and leadless ultra thin SMD

plastic package: 2 x 2 x 0.65 mm

 Trench MOSFET technology

 Exposed drain pad for excellent

thermal conduction

1.3 Applications

 Charging switch for portable devices

 DC/DC converters

 Power management in battery-driven

portables

 Hard disc and computing power

 Small brushless DC motor drive

management

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-30

-12

[1]

V_GS= -4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= -4.5 V; I_D= -2.9 A; T_j= 25 °C

-3.8

Static characteristics (per transistor)

R_DSon

drain-source on-state

resistance

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².

12 3 4 5 6 7...15

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