Datasheet > PMDPB56XN

PMDPB56XN

更新时间： 2024-09-12 19:49:39

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	883K
描述
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal

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中文翻译

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技术参数
数据手册

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PMDPB56XN 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
端子面层：	TIN	处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

PMDPB56XN 数据手册

PMDPB56XN

DFN2020-6

30 V, dual N-channel Trench MOSFET

Rev. 1 — 16 May 2012

Product data sheet

1. Product profile

1.1 General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless

ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

 Very fast switching

 Small and leadless ultra thin SMD

plastic package: 2 x 2 x 0.65 mm

 Trench MOSFET technology

 Exposed drain pad for excellent

thermal conduction

1.3 Applications

 Charging switch for portable devices

 DC-to-DC converters

 Power management in battery-driven

portables

 Hard disc and computing power

 Small brushless DC motor drive

management

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-12

[1]

V_GS= 4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= 4.5 V; I_D= 3.1 A; T_j= 25 °C

Static characteristics (per transistor)

R_DSon

drain-source on-state

resistance

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².

12 3 4 5 6 7...15

中文翻译

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