Datasheet > PJQ4848P

PJQ4848P

更新时间： 2024-10-29 14:55:15

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	748K
描述
DFN3333B-8L

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中文翻译

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数据手册

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PJQ4848P 数据手册

Preliminary

PPJQ4848P

40V Dual N-Channel Enhancement Mode MOSFET

DFN3333B-8L

40 V

37 A

Voltage

Current

Features

 R_DS(ON), V_GS@10V, I_D@8A<15mΩ

 R_DS(ON), V_GS@4.5V, I_D@6A<20mΩ

 Advanced Trench Process Technology

 High density cell design for ultralow on-resistance

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case: DFN3333B-8L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.001 ounces, 0.027 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

LIMIT

UNITS

V_DS

V_GS

+20

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current^{(Note 1)}

Power Dissipation

T_C=25^oC

T_C=100^oC

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_A=70^oC

I_D

I_DM

120

Continuous Drain Current

Power Dissipation

I_D

2.0

^oC

1.3

Operating Junction and Storage Temperature Range

T_J,T_STG

R_θJC

-55~150

3.79

62.5

Junction to Case

Typical Thermal Resistance^{(Note 4,5)}

Junction to Ambient

^oC/W

R_θJA

 Limited only By Maximum Junction Temperature

July 28,2017-REV.00

Page 1

12 3 4 5 6

中文翻译

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