Datasheet > PJQ5423-AU

PJQ5423-AU

更新时间： 2024-10-29 14:54:03

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
7页	528K
描述
DFN5060-8L

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数据手册

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PJQ5423-AU 数据手册

PJQ5423-AU

30V P-Channel Enhancement Mode MOSFET

-30 V

-60 A

DFN5060-8L

Voltage

Current

Features

 R_DS(ON), V_GS@-10V,I_D@-10A<8.5mΩ

 R_DS(ON), V_GS@-4.5V,I_D@-8A<14mΩ

 High switching speed

 Improved dv/dt capability

 Low gate charge

 Low reverse transfer capacitance

 AEC-Q101 qualified

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case : DFN5060-8L Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.08 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

LIMIT

UNITS

V_DS

V_GS

-30

+20

-60

Gate-Source Voltage

T_C=25^oC

T_C=100^oC

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_A=70^oC

Continuous Drain Current^{(Note 4)}

Pulsed Drain Current^{(Note 1)}

Power Dissipation

I_D

-38

I_DM

-240

-11

Continuous Drain Current^{(Note 4)}

I_D

-8.8

2.0

Power Dissipation

^oC

1.3

Operating Junction and Storage Temperature Range

T_J,T_STG

R_θJC

-55~150

2.0

Junction to Case

Typical Thermal Resistance^{(Note 4,5)}

^oC/W

Junction to Ambient

R_θJA

62.5

June 7,2022

PJQ5423-AU-REV.01

Page 1

12 3 4 5 6 7

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