PPJQ5427
30V P-Channel Enhancement Mode MOSFET
DFN5060-8L
-30 V
-100 A
Voltage
Current
Features
RDS(ON), VGS@-10V, ID@-20A<3.3mΩ
RDS(ON), VGS@-4.5V, ID@-15A<5mΩ
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case: DFN5060-8L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0028 ounces, 0.08 grams
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
SYMBOL
LIMIT
UNITS
VDS
VGS
-30
+20
-100
-63
V
Gate-Source Voltage
TC=25oC
TC=100oC
TC=25oC
TC=25oC
TC=100oC
TA=25oC
TA=70oC
TA=25oC
TA=70oC
Continuous Drain Current (Note 4)
Pulsed Drain Current (Note 1)
Power Dissipation
ID
A
IDM
PD
-400
63
W
A
25
-19
Continuous Drain Current
ID
-15
Power Dissipation
Power Dissipation
2.0
PD
W
1.3
Single Pulse Avalanche Energy (Note 6)
EAS
TJ,TSTG
RθJC
320
-55~150
2.0
mJ
oC
Operating Junction and Storage Temperature Range
Junction to Case
Typical Thermal Resistance (Note 4,5)
oC/W
Junction to Ambient
RθJA
62.5
Limited only By Maximum Junction Temperature
March 23,2018-REV.01
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