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PJQ5427 PDF预览

PJQ5427

更新时间: 2024-11-25 14:55:43
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
6页 725K
描述
DFN5060-8L

PJQ5427 数据手册

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PPJQ5427  
30V P-Channel Enhancement Mode MOSFET  
DFN5060-8L  
-30 V  
-100 A  
Voltage  
Current  
Features  
RDS(ON), VGS@-10V, ID@-20A<3.3mΩ  
RDS(ON), VGS@-4.5V, ID@-15A<5mΩ  
High switching speed  
Improved dv/dt capability  
Low Gate Charge  
Low reverse transfer capacitance  
Lead free in compliance with EU RoHS 2.0  
Green molding compound as per IEC 61249 standard  
Mechanical Data  
Case: DFN5060-8L Package  
Terminals: Solderable per MIL-STD-750, Method 2026  
Approx. Weight: 0.0028 ounces, 0.08 grams  
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
Drain-Source Voltage  
SYMBOL  
LIMIT  
UNITS  
VDS  
VGS  
-30  
+20  
-100  
-63  
V
Gate-Source Voltage  
TC=25oC  
TC=100oC  
TC=25oC  
TC=25oC  
TC=100oC  
TA=25oC  
TA=70oC  
TA=25oC  
TA=70oC  
Continuous Drain Current (Note 4)  
Pulsed Drain Current (Note 1)  
Power Dissipation  
ID  
A
IDM  
PD  
-400  
63  
W
A
25  
-19  
Continuous Drain Current  
ID  
-15  
Power Dissipation  
Power Dissipation  
2.0  
PD  
W
1.3  
Single Pulse Avalanche Energy (Note 6)  
EAS  
TJ,TSTG  
RθJC  
320  
-55~150  
2.0  
mJ  
oC  
Operating Junction and Storage Temperature Range  
Junction to Case  
Typical Thermal Resistance (Note 4,5)  
oC/W  
Junction to Ambient  
RθJA  
62.5  
Limited only By Maximum Junction Temperature  
March 23,2018-REV.01  
Page 1  

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