Datasheet > PJQ5435E-AU

PJQ5435E-AU

更新时间： 2024-10-29 14:53:23

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	411K
描述
DFN5060-8L

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中文翻译

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PJQ5435E-AU 数据手册

PJQ5435E-AU

30V P-Channel Enhancement Mode MOSFET

DFN5060-8L

-30 V

-47 A

Voltage

Current

Features

 RDS(ON), VGS@-10V, ID@-20A<12.1mΩ

 RDS(ON), VGS@-4.5V, ID@-10A<20mΩ

 100% UIS tested

 Reliable and Rugged

 AEC-Q101 qualified

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case : DFN5060-8L Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.08 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

V_DS

LIMIT

-30

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_GS

±25

-47

T_C=25^oC

T_C=100^oC

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_A=70^oC

Continuous Drain Current^{(Note 3)}

Pulsed Drain Current^{(Note 1)}

Power Dissipation

I_D

-33

I_DM

-143

-13.2

-11

Continuous Drain Current^{(Note 4)}

I_D

3.3

Power Dissipation

2.3

Single Pulse Avalanche Energy^{(Note 5)}

^oC

E_AS

T_J,T_STG

R_θJC

Operating Junction and Storage Temperature Range

-55~175

3.5

Junction to Case

Thermal Resistance^{(Note 4)}

^oC/W

Junction to Ambient

R_θJA

April 28,2023

PJQ5435E-AU-REV.00

Page 1

12 3 4 5 6

中文翻译

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