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PJQ5442 PDF预览

PJQ5442

更新时间: 2024-10-29 14:54:07
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
6页 647K
描述
DFN5060-8L

PJQ5442 数据手册

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PPJQ5442  
40V N-Channel Enhancement Mode MOSFET  
DFN5060-8L  
40 V  
90A  
Voltage  
Current  
Features  
RDS(ON), VGS@10V, ID@20A<5.5mΩ  
RDS(ON), VGS@4.5V, ID@10A<7.5mΩ  
High switching speed  
Improved dv/dt capability  
Low reverse transfer capacitance  
Lead free in compliance with EU RoHS 2.0  
Green molding compound as per IEC 61249 standard  
Mechanical Data  
Case : DFN5060-8L Package  
Terminals : Solderable per MIL-STD-750, Method 2026  
Approx. Weight : 0.0028 ounces, 0.08 grams  
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMIT  
40  
UNITS  
V
Gate-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current(Note 1)  
Power Dissipation  
VGS  
+20  
90  
TC=25oC  
TC=100oC  
TC=25oC  
TC=25oC  
TC=100oC  
TA=25oC  
TA=70oC  
TA=25oC  
TA=70oC  
ID  
57  
A
IDM  
PD  
240  
83  
W
A
33  
14  
Continuous Drain Current  
ID  
11  
Power Dissipation  
Power Dissipation  
2.0  
PD  
W
oC  
1.3  
Operating Junction and Storage Temperature Range  
TJ,TSTG  
RθJC  
-55~150  
1.51  
62.5  
Junction to Case  
Typical Thermal Resistance(Note 4,5)  
oC/W  
Junction to Ambient  
RθJA  
Limited only By Maximum Junction Temperature  
March 23,2018-REV.01  
Page 1  

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