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PJQ5451E-AU PDF预览

PJQ5451E-AU

更新时间: 2024-11-21 14:55:55
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
6页 410K
描述
DFN5060-8L

PJQ5451E-AU 数据手册

 浏览型号PJQ5451E-AU的Datasheet PDF文件第2页浏览型号PJQ5451E-AU的Datasheet PDF文件第3页浏览型号PJQ5451E-AU的Datasheet PDF文件第4页浏览型号PJQ5451E-AU的Datasheet PDF文件第5页浏览型号PJQ5451E-AU的Datasheet PDF文件第6页 
PJQ5451E-AU  
40V P-Channel Enhancement Mode MOSFET  
DFN5060-8L  
-40 V  
-67 A  
Voltage  
Current  
Features  
RDS(ON), VGS@-10V, ID@-20A<9.4mΩ  
RDS(ON), VGS@-4.5V, ID@-10A<14.3mΩ  
100% UIS tested  
Reliable and Rugged  
AEC-Q101 qualified  
Lead free in compliance with EU RoHS 2.0  
Green molding compound as per IEC 61249 standard  
Mechanical Data  
Case : DFN5060-8L Package  
Terminals : Solderable per MIL-STD-750, Method 2026  
Approx. Weight : 0.08 grams  
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
SYMBOL  
VDS  
LIMIT  
-40  
UNITS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
±25  
-67  
TC=25oC  
TC=100oC  
TC=25oC  
TC=25oC  
TC=100oC  
TA=25oC  
TA=70oC  
TA=25oC  
TA=70oC  
Continuous Drain Current(Note 3)  
Pulsed Drain Current(Note 1)  
Power Dissipation  
ID  
A
-47  
IDM  
PD  
-228  
75  
W
A
38  
-14  
Continuous Drain Current(Note 4)  
ID  
-11.7  
3.3  
Power Dissipation  
PD  
W
2.3  
Single Pulse Avalanche Energy(Note 5)  
132  
-55~175  
2
mJ  
oC  
EAS  
TJ,TSTG  
RθJC  
Operating Junction and Storage Temperature Range  
Junction to Case  
Thermal Resistance(Note 4)  
oC/W  
Junction to Ambient  
RθJA  
45  
April 28,2023  
PJQ5451E-AU-REV.00  
Page 1  

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