Datasheet > PJQ5448-AU

PJQ5448-AU

更新时间： 2024-11-25 14:53:51

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	632K
描述
DFN5060-8L

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中文翻译

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数据手册

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PJQ5448-AU 数据手册

PPJQ5448-AU

40V N-Channel Enhancement Mode MOSFET

DFN5060-8L

40 V

50A

Voltage

Current

Features

 R_DS(ON), V_GS@10V, I_D@20A<11mΩ

 R_DS(ON), V_GS@4.5V, I_D@10A<15mΩ

 High switching speed

 Improved dv/dt capability

 Low reverse transfer capacitance

 AEC-Q101 qualified

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case: DFN5060-8L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0028 ounces, 0.08 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

V_DS

LIMIT

UNITS

Gate-Source Voltage

V_GS

+20

T_C=25^oC

T_C=100^oC

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_A=70^oC

Continuous Drain Current ^{(Note 4)}

Pulsed Drain Current ^{(Note 1)}

Power Dissipation

I_D

31.5

120

65.2

32.6

9.6

I_DM

Continuous Drain Current ^{(Note 4)}

I_D

7.6

2.4

Power Dissipation

1.6

Single Pulse Avalanche Energy ^{(Note 6)}

E_AS

T_J,T_STG

R_θJC

^oC

Operating Junction and Storage Temperature Range

-55~175

2.3

Junction to Case

Typical Thermal Resistance ^{(Note 4,5)}

Junction to Ambient

^oC/W

R_θJA

62.5

 Limited only By Maximum Junction Temperature

March 28,2019-REV.00

Page 1

12 3 4 5 6

中文翻译

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