Datasheet > PJQ5443

PJQ5443

更新时间： 2024-11-25 14:53:15

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	696K
描述
DFN5060-8L

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中文翻译

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数据手册

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PJQ5443 数据手册

PPJQ5443

40V P-Channel Enhancement Mode MOSFET

DFN5060-8L

-40 V

-50 A

Voltage

Current

Features

 R_DS(ON), V_GS@-10V, I_D@-10A<12mΩ

 R_DS(ON), V_GS@-4.5V, I_D@-8A<17.5mΩ

 High switching speed

 Improved dv/dt capability

 Low Gate Charge

 Low reverse transfer capacitance

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case : DFN5060-8L Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.0028 ounces, 0.08 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

LIMIT

UNITS

V_DS

V_GS

-40

+20

-50

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current^{(Note 1)}

Power Dissipation

T_C=25^oC

T_C=100^oC

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_A=70^oC

I_D

-32

I_DM

-166

-9

Continuous Drain Current

I_D

-7

Power Dissipation

2.0

^oC

1.3

Operating Junction and Storage Temperature Range

T_J,T_STG

R_θJC

-55~150

2.0

Junction to Case

Typical Thermal Resistance^{(Note 4,5)}

^oC/W

Junction to Ambient

R_θJA

62.5

 Limited only By Maximum Junction Temperature

March 23,2018-REV.02

Page 1

12 3 4 5 6

中文翻译

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