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PJQ5464A PDF预览

PJQ5464A

更新时间: 2024-11-07 01:24:19
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
7页 392K
描述
60V N-Channel Enhancement Mode MOSFET

PJQ5464A 数据手册

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PPJQ5464A  
60V N-Channel Enhancement Mode MOSFET  
DFN5060-8L  
60 V  
55 A  
Voltage  
Current  
Features  
RDS(ON) , VGS@10V, ID@20A<9.5m  
RDS(ON) , VGS@4.5V, ID@10A<10.8mΩ  
High switching speed  
Improved dv/dt capability  
Low reverse transfer capacitance  
Lead free in compliance with EU RoHS 2011/65/EU  
directive.  
Green molding compound as per IEC61249 Std.  
(Halogen Free)  
Mechanical Data  
Case: DFN5060-8L Package  
Terminals: Solderable per MIL-STD-750, Method 2026  
Approx. Weight: 0.0028 ounces, 0.08 grams  
Marking: Q5464A  
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
Drain-Source Voltage  
SYMBOL  
LIMIT  
UNITS  
VDS  
VGS  
60  
+20  
55  
V
V
Gate-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current (Note 1)  
Power Dissipation  
TC=25oC  
TC=100oC  
TC=25oC  
TC=25oC  
TC=100oC  
TA=25oC  
TA=70oC  
TA=25oC  
TA=70oC  
ID  
36  
A
IDM  
PD  
125  
60  
W
24  
10  
A
A
Continuous Drain Current  
ID  
8
Power Dissipation  
Power Dissipation  
Single Pulse Avalanche Energy (Note 6)  
2.0  
1.3  
97  
PD  
W
EAS  
TJ,TSTG  
RθJC  
mJ  
oC  
Operating Junction and Storage Temperature Range  
-55~150  
2.1  
62.5  
Junction to Case  
Typical Thermal Resistance(Note 4,5)  
Junction to Ambient  
oC/W  
RθJA  
Limited only By Maximum Junction Temperature  
July 14,2015-REV.00  
Page 1  

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