Datasheet > PJQ5478

PJQ5478

更新时间： 2024-09-17 01:23:15

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
7页	352K
描述
100V N-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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PJQ5478 数据手册

PPJQ5474A

100V N-Channel Enhancement Mode MOSFET

DFN5060-8L

100 V

18A

Voltage

Current

Features

 RDS(ON) , VGS@10V, ID@18A<50mΩ

 RDS(ON) , VGS@4.5V, ID@15A<55mΩ

 Advanced Trench Process Technology

 High density cell design for ultra low on-resistance

 Lead free in compliance with EU RoHS 2011/65/EU

directive

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: DFN5060-8L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0028 ounces, 0.08 grams

 Marking: Q5474A

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

100

+20

Continuous Drain Current

Pulsed Drain Current

Single Pulse Avalanche Energy ^{(Note 5)}

I_DM

E_AS

16.2

T_C=25^oC

Derate above 25^oC

Power Dissipation

P_D

416

mW/ ^oC

^oC

Operating Junction and Storage Temperature Range

Typical Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient, t<10s ^{(Note 3)}

^oC/W

R_θJC

2.4

July 14,2015-REV.00

Page 1

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