Datasheet > PJQ5606

PJQ5606

更新时间： 2024-09-17 14:53:43

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
9页	1222K
描述
DFN5060B-8L

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中文翻译

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数据手册

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PJQ5606 数据手册

PPJQ5606

30V Complementary Enhancement Mode MOSFET

DFN5060B-8L

30/-30 V

25/-22 A

Voltage

Current

Features

 High switching speed

 Improved dv/dt capability

 Low Gate Charge

 Low reverse transfer capacitance

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case : DFN5060B-8L Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.0035 ounces, 0.092 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

N-CH LIMIT

P-CH LIMIT

UNITS

V_DS

V_GS

-30

Gate-Source Voltage

+20

T_C=25^oC

T_C=100^oC

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_A=70^oC

-22

-14

-88

Continuous Drain Current ^{(Note 4)}

Pulsed Drain Current ^{(Note 1)}

Power Dissipation

I_D

I_DM

100

8.4

-6.1

-5

Continuous Drain Current ^{(Note 4)}

Power Dissipation

I_D

5.6

1.7

1.1

^oC

Operating Junction and Storage Temperature Range

T_J,T_STG

R_θJC

-55~150

Junction to Case

Typical Thermal Resistance ^{(Note 4,5)}

Junction to Ambient

^oC/W

R_θJA

73.5

 Limited only By Maximum Junction Temperature

October 31,2017-REV.00

Page 1

12 3 4 5 6 7...9

中文翻译

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