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PJQ5846

更新时间: 2024-11-25 14:53:27
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
6页 697K
描述
DFN5060B-8L

PJQ5846 数据手册

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PPJQ5846  
40V N-Channel Enhancement Mode MOSFET  
DFN5060B-8L  
40 V  
40 A  
Voltage  
Current  
Features  
RDS(ON), VGS@10V, ID@8A<10.5mΩ  
RDS(ON), VGS@4.5V, ID@4A<15mΩ  
High switching speed  
Improved dv/dt capability  
Low reverse transfer capacitance  
Lead free in compliance with EU RoHS 2.0  
Green molding compound as per IEC 61249 standard  
Mechanical Data  
Case : DFN5060B-8L Package  
Terminals : Solderable per MIL-STD-750, Method 2026  
Approx. Weight : 0.0035 ounces, 0.092 grams  
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
Drain-Source Voltage  
SYMBOL  
LIMIT  
UNITS  
VDS  
VGS  
40  
+20  
40  
V
Gate-Source Voltage  
TC=25oC  
TC=100oC  
TC=25oC  
TC=25oC  
TC=100oC  
TA=25oC  
TA=70oC  
TA=25oC  
TA=70oC  
Continuous Drain Current (Note 4)  
Pulsed Drain Current (Note 1)  
Power Dissipation  
ID  
25  
A
IDM  
PD  
120  
32  
W
A
12  
9.5  
Continuous Drain Current (Note 4)  
ID  
7.5  
1.7  
Power Dissipation  
PD  
W
1.1  
Single Pulse Avalanche Energy (Note 6)  
EAS  
TJ,TSTG  
RθJC  
72  
mJ  
oC  
Operating Junction and Storage Temperature Range  
-55~150  
3.9  
Junction to Case  
Typical Thermal Resistance (Note 4,5)  
Junction to Ambient  
oC/W  
RθJA  
73.5  
Limited only By Maximum Junction Temperature  
October 18,2017-REV.00  
Page 1  

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