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PJQ5530 PDF预览

PJQ5530

更新时间: 2024-11-25 17:00:51
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
6页 466K
描述
DFN5060X-8L

PJQ5530 数据手册

 浏览型号PJQ5530的Datasheet PDF文件第2页浏览型号PJQ5530的Datasheet PDF文件第3页浏览型号PJQ5530的Datasheet PDF文件第4页浏览型号PJQ5530的Datasheet PDF文件第5页浏览型号PJQ5530的Datasheet PDF文件第6页 
PJQ5530  
30V N-Channel Enhancement Mode MOSFET  
DFN5060X-8L  
30 V  
49 A  
Voltage  
Current  
Features  
RDS(ON), VGS@10V, ID@20A<7.3mΩ  
RDS(ON), VGS@4.5V, ID@10A<12.7mΩ  
Excellent FOM  
Logic Level Drive  
Lead free in compliance with EU RoHS 2.0  
Green molding compound as per IEC 61249 standard  
Mechanical Data  
Case : DFN5060X-8L Package  
Terminals : Solderable per MIL-STD-750, Method 2026  
Approx. Weight : 0.087 grams  
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
SYMBOL  
VDS  
LIMIT  
30  
UNITS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
±20  
49  
TC=25oC  
TC=100oC  
TC=25oC  
TC=25oC  
TC=100oC  
TA=25oC  
TA=70oC  
TA=25oC  
TA=70oC  
Continuous Drain Current(Note 3)  
Pulsed Drain Current(Note 1)  
Power Dissipation  
ID  
A
31  
IDM  
PD  
196  
27.8  
11  
W
A
16  
Continuous Drain Current(Note 4)  
ID  
13  
2.8  
Power Dissipation  
PD  
W
1.8  
Single Pulse Avalanche Energy(Note 5)  
20  
mJ  
oC  
EAS  
TJ,TSTG  
RθJC  
Operating Junction and Storage Temperature Range  
-55~150  
4.5  
Junction to Case  
Thermal Resistance(Note 4)  
oC/W  
Junction to Ambient  
RθJA  
45  
November 24,2023  
PJQ5530-REV.00  
Page 1  

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