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PJQA5V6 PDF预览

PJQA5V6

更新时间: 2024-11-09 06:03:47
品牌 Logo 应用领域
强茂 - PANJIT 电视
页数 文件大小 规格书
2页 54K
描述
QUAD TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION

PJQA5V6 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended包装说明:R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.81最大击穿电压:5.88 V
最小击穿电压:5.3 V配置:COMMON ANODE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
最大非重复峰值反向功率耗散:150 W元件数量:4
端子数量:6最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大重复峰值反向电压:3 V表面贴装:YES
技术:ZENER端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED

PJQA5V6 数据手册

 浏览型号PJQA5V6的Datasheet PDF文件第2页 
PJQA5V6  
QUAD TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION  
This Quad TVS/Zener Array family have been designed to Protect Sensitive  
Equipment against ESD and to prevent Latch-Up events in CMOS circuitry  
operating in the 3.0Vdc. This TVS array offers an integrated solution to protect  
up to 4 data lines where the board space is a premium.  
SPECIFICATION FEATURES  
150W (8/20µs), 24W (10/1000µs) Power Dissipation  
1
Low Leakage Current, Maximum of 2µA at rated voltage  
Very Low Clamping Voltage  
6
5
4
IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance  
Industry Standard Surface Mount Package SOT23-6L  
100% Tin Matte Finish (RoHS Compliance)  
APPLICATIONS  
Personal Digital Assistant (PDA)  
SIM Card Port Protection (Mobile Phone)  
Portable Instrumentation  
1
2
3
SOT23-6L  
Mobile Phones and Accessories  
Memory Card Port Protection  
MAXIMUM RATINGS (Per Device)  
Units  
Rating  
Symbol  
Value  
150  
25  
P
Peak Pulse Power (8/20µs Waveform)  
pp  
W
V
ESD Voltage (HBM)  
kV  
°C  
°C  
ESD  
T
J
-55 to +150  
-55 to +150  
Operating Temperature Range  
Storage Temperature Range  
T
stg  
ELECTRICAL CHARACTERISTICS (Per Device)  
Tj = 25°C  
Parameter  
Conditions  
Min Typical Max  
Units  
Symbol  
Reverse Stand-Off Voltage  
V
3.0  
V
V
WRM  
V
I
=
1 mA  
5.3  
5.6  
5.88  
2
Reverse Breakdown Voltage  
Reverse Leakage Current  
Clamping Voltage (8/20µs)  
Clamping Voltage (8/20µs)  
BR  
BR  
I
V
R
=
=
=
µA  
V
3.0V  
R
V
c
I
I
5 Amps  
10 Amps  
8
pp  
pp  
V
c
9.5  
V
0 Vdc Bias f = 1MHz  
Between I/O pins and pin 2,5  
Off State Junction Capacitance  
Off State Junction Capacitance  
250  
160  
pF  
pF  
Cj  
Cj  
3 Vdc Bias f = 1MHz  
Between I/O pins and pin 2,5  
3/28/2006  
Page  
1
www.panjit.com  

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