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PJQ5948V-AU PDF预览

PJQ5948V-AU

更新时间: 2024-11-10 14:55:19
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
6页 415K
描述
DFN5060B-8L

PJQ5948V-AU 数据手册

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PJQ5948V-AU  
40V Dual N-Channel Enhancement Mode MOSFET  
DFN5060B-8L  
40 V  
35 A  
Voltage  
Current  
Features  
RDS(ON), VGS@10V, ID@10A<13.4mΩ  
RDS(ON), VGS@7V, ID@6A<17mΩ  
Excellent FOM  
Standard Level Drive  
AEC-Q101 qualified  
Lead free in compliance with EU RoHS 2.0  
Green molding compound as per IEC 61249 standard  
Mechanical Data  
Case : DFN5060B-8L Package  
Terminals : Solderable per MIL-STD-750, Method 2026  
Approx. Weight : 0.092 grams  
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
SYMBOL  
VDS  
LIMIT  
40  
UNITS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
±20  
35  
TC=25oC  
TC=100oC  
TC=25oC  
TC=25oC  
TC=100oC  
TA=25oC  
TA=70oC  
TA=25oC  
TA=70oC  
Continuous Drain Current(Note 3)  
Pulsed Drain Current(Note 1)  
Power Dissipation  
ID  
A
25  
IDM  
PD  
140  
32  
W
A
16  
10.5  
8.8  
Continuous Drain Current(Note 4)  
ID  
2.4  
Power Dissipation  
PD  
W
1.7  
Single Pulse Avalanche Energy(Note 5)  
42  
mJ  
oC  
EAS  
TJ,TSTG  
RθJC  
Operating Junction and Storage Temperature Range  
-55~175  
5
Junction to Case  
Thermal Resistance(Note 4)  
oC/W  
Junction to Ambient  
RθJA  
60  
April 18,2023  
PJQ5948V-AU-REV.01  
Page 1  

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