Datasheet > PJQ5866A-AU

PJQ5866A-AU

更新时间： 2024-09-17 14:55:55

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
7页	472K
描述
DFN5060B-8L

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中文翻译

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数据手册

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PJQ5866A-AU 数据手册

PPJQ5866A-AU

60V Dual N-Channel Enhancement Mode MOSFET

DFN5060B-8L

60 V

40 A

Voltage

Current

Features

 R_DS(ON), V_GS@10V, I_D@20A<17mΩ

 R_DS(ON), V_GS@4.5V, I_D@10A<20mΩ

 High switching speed

 Improved dv/dt capability

 Low reverse transfer capacitance

 AEC-Q101 qualified

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case : DFN5060B-8L Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.0035 ounces, 0.092 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

LIMIT

UNITS

V_DS

V_GS

+20

Gate-Source Voltage

T_C=25^oC

T_C=100^oC

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_A=70^oC

Continuous Drain Current ^{(Note 4)}

Pulsed Drain Current ^{(Note 1)}

Power Dissipation

I_D

I_DM

160

68.2

34.1

Continuous Drain Current ^{(Note 4)}

I_D

5.5

2.0

Power Dissipation

1.4

Single Pulse Avalanche Energy ^{(Note 6)}

E_AS

T_J,T_STG

R_θJC

^oC

Operating Junction and Storage Temperature Range

-55~175

2.2

Junction to Case

Typical Thermal Resistance ^{(Note 4,5)}

Junction to Ambient

^oC/W

R_θJA

73.5

 Limited only By Maximum Junction Temperature

March 28,2019-REV.00

Page 1

12 3 4 5 6 7

中文翻译

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