Datasheet > PJQ5476AL

PJQ5476AL

更新时间： 2024-11-07 01:24:19

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
7页	354K
描述
100V N-Channel Enhancement Mode MOSFET

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PJQ5476AL 数据手册

PPJQ5476AL

100V N-Channel Enhancement Mode MOSFET

DFN5060-8L

100 V

42A

Voltage

Current

Features

 RDS(ON) , VGS@10V, ID@20A<25mΩ

 RDS(ON) , VGS@4.5V, ID@15A<28.5mΩ

 Advanced Trench Process Technology

 High density cell design for ultra low on-resistance

 Lead free in compliance with EU RoHS 2011/65/EU directive

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: DFN5060-8L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0028 ounces, 0.08 grams

 Marking: Q5476AL

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

LIMIT

UNITS

V_DS

V_GS

100

+20

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current ^{(Note 1)}

Power Dissipation

T_C=25^oC

T_C=100^oC

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_A=70^oC

I_D

26.6

150

I_DM

6.5

Continuous Drain Current

Power Dissipation

I_D

5.2

2.0

1.3

Single Pulse Avalanche Energy^{(Note 6)}

E_AS

T_J,T_STG

R_θJC

63.4

-55~150

1.5

^oC

Operating Junction and Storage Temperature Range

Junction to Case

Typical Thermal Resistance^{(Note 4,5)}

Junction to Ambient

^oC/W

R_θJA

62.5

 Limited only By Maximum Junction Temperature

July 14,2015-REV.00

Page 1

12 3 4 5 6 7

中文翻译

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