Datasheet > PJQ5460A

PJQ5460A

更新时间： 2024-09-17 01:24:19

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
7页	379K
描述
60V N-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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PJQ5460A 数据手册

PPJQ5460A

60V N-Channel Enhancement Mode MOSFET

DFN5060-8L

60 V

20 A

Voltage

Current

Features

 R_DS(ON), V_GS@10V,I_D@10A<42mΩ

 R_DS(ON), V_GS@4.5V,I_D@5A<52mΩ

 High switching speed

 Improved dv/dt capability

 Low reverse transfer capacitance

 Lead free in compliance with EU RoHS 2011/65/EU

directive.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: DFN5060-8L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0028 ounces, 0.08 grams

 Marking: Q5460A

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

LIMIT

UNITS

V_DS

V_GS

+20

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current ^{(Note 1)}

Power Dissipation

T_C=25^oC

T_C=100^oC

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_A=70^oC

I_D

I_DM

4.6

Continuous Drain Current

I_D

3.7

Power Dissipation

2.0

1.3

Single Pulse Avalanche Energy ^{(Note 6)}

E_AS

T_J,T_STG

R_θJC

^oC

Operating Junction and Storage Temperature Range

-55~150

3.0

Junction to Case

Typical Thermal Resistance ^{(Note 4,5)}

Junction to Ambient

^oC/W

R_θJA

62.5

 Limited only By Maximum Junction Temperature

July 14,2015-REV.00

Page 1

12 3 4 5 6 7

中文翻译

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