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PJQ5461A PDF预览

PJQ5461A

更新时间: 2024-11-25 01:24:19
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
7页 401K
描述
60V P-Channel Enhancement Mode MOSFET

PJQ5461A 数据手册

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PPJQ5461A  
60V P-Channel Enhancement Mode MOSFET  
DFN5060-8L  
-60 V  
-11.5 A  
Voltage  
Current  
Features  
RDS(ON), VGS@-10V,ID@-6A<110mΩ  
RDS(ON), VGS@-4.5V,ID@-3A<130mΩ  
High switching speed  
Improved dv/dt capability  
Low Gate Charge  
Low reverse transfer capacitance  
Lead free in compliance with EU RoHS 2011/65/EU directive.  
Green molding compound as per IEC61249 Std.  
(Halogen Free)  
Mechanical Data  
Case: DFN5060-8L Package  
Terminals: Solderable per MIL-STD-750, Method 2026  
Approx. Weight: 0.0028 ounces, 0.08 grams  
Marking: Q5461A  
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
Drain-Source Voltage  
SYMBOL  
LIMIT  
UNITS  
VDS  
VGS  
-60  
+20  
-11.5  
-7.2  
-35  
V
V
Gate-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current (Note 1)  
Power Dissipation  
TC=25oC  
TC=100oC  
TC=25oC  
TC=25oC  
TC=100oC  
TA=25oC  
TA=70oC  
TA=25oC  
TA=70oC  
ID  
A
IDM  
PD  
26  
W
10  
-3.2  
-2.5  
2.0  
A
A
Continuous Drain Current  
ID  
Power Dissipation  
Power Dissipation  
PD  
W
1.3  
Single Pulse Avalanche Energy (Note 6)  
EAS  
TJ,TSTG  
RθJC  
20  
mJ  
oC  
Operating Junction and Storage Temperature Range  
-55~150  
4.8  
Junction to Case  
Typical Thermal Resistance(Note 4,5)  
Junction to Ambient  
oC/W  
RθJA  
62.5  
Limited only By Maximum Junction Temperature  
July 14,2015-REV.00  
Page 1  

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