Datasheet > PJQ5441

PJQ5441

更新时间： 2024-11-21 14:54:27

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	604K
描述
DFN5060-8L

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中文翻译

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数据手册

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PJQ5441 数据手册

PJQ5441

40V P-Channel Enhancement Mode MOSFET

DFN5060-8L

-40V

-80A

Voltage

Current

Features

 R_DS(ON), V_GS@-10V,I_D@-20A<6.5mΩ

 R_DS(ON), V_GS@-4.5V,I_D@-10A<9mΩ

 Advanced Trench Process Technology

 High density cell design for ultra low on-resistance

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case : DFN5060-8L Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.0028 ounces, 0.08 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

V_DS

LIMIT

-40

UNITS

Gate-Source Voltage

V_GS

±20

-80

T_C=25^oC

T_C=100^oC

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_A=70^oC

Continuous Drain Current^{(Note 4)}

Pulsed Drain Current^{(Note 1)}

Power Dissipation

I_D

-50

I_DM

-300

-17

Continuous Drain Current^{(Note 4)}

Power Dissipation

I_D

-14

3.1

2.0

Single Pulse Avalanche Energy^{(Note 6)}

E_AS

T_J,T_STG

R_θJC

245

-55~150

1.8

^oC

Operating Junction and Storage Temperature Range

Junction to Case

Typical Thermal Resistance^{(Note 5)}

^oC/W

Junction to Ambient

R_θJA

November 2,2020

PJQ5441-REV.00

Page 1

12 3 4 5 6

中文翻译

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