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PJQ5441 PDF预览

PJQ5441

更新时间: 2024-10-29 14:54:27
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
6页 604K
描述
DFN5060-8L

PJQ5441 数据手册

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PJQ5441  
40V P-Channel Enhancement Mode MOSFET  
DFN5060-8L  
-40V  
-80A  
Voltage  
Current  
Features  
RDS(ON), VGS@-10V,ID@-20A<6.5mΩ  
RDS(ON), VGS@-4.5V,ID@-10A<9mΩ  
Advanced Trench Process Technology  
High density cell design for ultra low on-resistance  
Lead free in compliance with EU RoHS 2.0  
Green molding compound as per IEC 61249 standard  
Mechanical Data  
Case : DFN5060-8L Package  
Terminals : Solderable per MIL-STD-750, Method 2026  
Approx. Weight : 0.0028 ounces, 0.08 grams  
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMIT  
-40  
UNITS  
V
Gate-Source Voltage  
VGS  
±20  
-80  
TC=25oC  
TC=100oC  
TC=25oC  
TC=25oC  
TC=100oC  
TA=25oC  
TA=70oC  
TA=25oC  
TA=70oC  
Continuous Drain Current(Note 4)  
Pulsed Drain Current(Note 1)  
Power Dissipation  
ID  
-50  
A
IDM  
PD  
-300  
69  
W
A
28  
-17  
Continuous Drain Current(Note 4)  
Power Dissipation  
ID  
-14  
3.1  
PD  
W
2.0  
Single Pulse Avalanche Energy(Note 6)  
EAS  
TJ,TSTG  
RθJC  
245  
-55~150  
1.8  
mJ  
oC  
Operating Junction and Storage Temperature Range  
Junction to Case  
Typical Thermal Resistance(Note 5)  
oC/W  
Junction to Ambient  
RθJA  
40  
November 2,2020  
PJQ5441-REV.00  
Page 1  

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