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PJQ5428 PDF预览

PJQ5428

更新时间: 2024-10-29 14:55:39
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
6页 721K
描述
DFN5060-8L

PJQ5428 数据手册

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PPJQ5428  
30V N-Channel Enhancement Mode MOSFET  
DFN5060-8L  
130A  
30 V  
Voltage  
Current  
Features  
RDS(ON), VGS@10V, ID@20A<1.6mΩ  
RDS(ON), VGS@4.5V, ID@15A<2.4mΩ  
High switching speed  
Improved dv/dt capability  
Low Gate Charge  
Low reverse transfer capacitance  
Lead free in compliance with EU RoHS 2.0  
Green molding compound as per IEC 61249 standard  
Mechanical Data  
Case: DFN5060-8L Package  
Terminals: Solderable per MIL-STD-750, Method 2026  
Approx. Weight: 0.0028 ounces, 0.08 grams  
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
Drain-Source Voltage  
SYMBOL  
LIMIT  
UNITS  
VDS  
VGS  
30  
+20  
130  
83  
V
Gate-Source Voltage  
TC=25oC  
TC=100oC  
TC=25oC  
TC=25oC  
TC=100oC  
TA=25oC  
TA=70oC  
TA=25oC  
TA=70oC  
Continuous Drain Current (Note 4)  
Pulsed Drain Current (Note 1)  
Power Dissipation  
ID  
A
IDM  
PD  
520  
83  
W
A
33  
20  
Continuous Drain Current  
ID  
16  
Power Dissipation  
Power Dissipation  
Single Pulse Avalanche Energy (Note 6)  
2.0  
PD  
W
1.3  
EAS  
TJ,TSTG  
RθJC  
240  
-55~150  
1.51  
62.5  
mJ  
oC  
Operating Junction and Storage Temperature Range  
Junction to Case  
Typical Thermal Resistance (Note 4,5)  
Junction to Ambient  
oC/W  
RθJA  
Limited only By Maximum Junction Temperature  
March 23,2018-REV.01  
Page 1  

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