Datasheet > PJQ4882AP

PJQ4882AP

更新时间： 2024-11-21 14:56:03

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	739K
描述
DFN3333B-8L

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数据手册

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PJQ4882AP 数据手册

PJQ4882AP

100V Dual N-Channel Enhancement Mode Mosfet

DFN3333B-8L

100 V

5.1 A

Voltage

Current

Features

 R_DS(ON), V_GS@10V,I_D@2.2A<310mΩ

 R_DS(ON), V_GS@4.5V,I_D@1.0A<320mΩ

 High switching speed

 Improved dv/dt capability

 Low reverse transfer capacitance

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case : DFN3333B-8L Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.001 ounces, 0.027 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

V_DS

LIMIT

100

±20

5.1

UNITS

Gate-Source Voltage

V_GS

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

3.2

Continuous Drain Current^{(Note 4)}

Pulsed Drain Current^{(Note 1)}

Power Dissipation

I_D

1.7

1.3

I_DM

7.7

2.1

1.3

Operating Junction and Storage Temperature Range

Junction to Case

T_J,T_STG

R_θJC

^oC

-55~150

6.5

Typical Thermal Resistance^{(Note 5)}

Junction to Ambient

^oC/W

R_θJA

June 22,2020

PJQ4882AP-REV.00

Page 1

12 3 4 5 6

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