PPJQ5424-AU
30V N-Channel Enhancement Mode MOSFET
DFN5060-8L
100A
30 V
Voltage
Current
Features
RDS(ON), VGS@10V, ID@20A<3.8mΩ
RDS(ON), VGS@4.5V, ID@15A<5.5mΩ
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
AEC-Q101 qualified
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case: DFN5060-8L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0028 ounces, 0.08 grams
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
SYMBOL
LIMIT
UNITS
VDS
VGS
30
+20
100
63
V
Gate-Source Voltage
TC=25oC
TC=100oC
TC=25oC
TC=25oC
TC=100oC
TA=25oC
TA=70oC
TA=25oC
TA=70oC
Continuous Drain Current (Note 4)
Pulsed Drain Current (Note 1)
Power Dissipation
ID
A
IDM
PD
400
83
W
A
33
13.5
11
Continuous Drain Current (Note 4)
ID
2
Power Dissipation
PD
W
1.3
Single Pulse Avalanche Energy (Note 6)
EAS
TJ,TSTG
RθJC
100
-55~150
1.51
62.5
mJ
oC
Operating Junction and Storage Temperature Range
Junction to Case
Typical Thermal Resistance (Note 4,5)
Junction to Ambient
oC/W
RθJA
Limited only By Maximum Junction Temperature
May 22,2019-REV.00
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