Datasheet > PJQ5412

PJQ5412

更新时间： 2024-10-29 14:55:39

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	523K
描述
DFN5060-8L

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中文翻译

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数据手册

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PJQ5412 数据手册

PPJQ5412

30V N-Channel Enhancement Mode MOSFET

DFN5060-8L

30 V

45A

Voltage

Current

Features

 R_DS(ON), V_GS@10V, I_D@10A<12mΩ

 R_DS(ON), V_GS@4.5V, I_D@5A<18mΩ

 High switching speed

 Improved dv/dt capability

 Low reverse transfer capacitance

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case: DFN5060-8L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0028 ounces, 0.08 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

V_DS

LIMIT

UNITS

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current^{(Note 1)}

Power Dissipation

V_GS

+20

T_C=25^oC

T_C=100^oC

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_A=70^oC

I_D

I_DM

180

Continuous Drain Current

I_D

Power Dissipation

2.0

1.3

Single Pulse Avalanche Energy^{(Note 6)}

E_AS

T_J,T_STG

R_θJC

^oC

Operating Junction and Storage Temperature Range

-55~150

3.1

Junction to Case

Typical Thermal Resistance^{(Note 4,5)}

^oC/W

Junction to Ambient

R_θJA

62.5

 Limited only By Maximum Junction Temperature

March 23,2018-REV.01

Page 1

12 3 4 5 6

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