Datasheet > PJQ5426

PJQ5426

更新时间： 2024-10-29 14:54:07

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
7页	409K
描述
DFN5060-8L

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中文翻译

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数据手册

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PJQ5426 数据手册

PPJQ5426

30V N-Channel Enhancement Mode MOSFET

DFN5060-8L

30 V

115A

Voltage

Current

Features

 R_DS(ON), V_GS@10V,I_D@20A<2.4mΩ

 R_DS(ON), V_GS@4.5V,I_D@15A<3.3mΩ

 High switching speed

 Improved dv/dt capability

 Low Gate Charge

 Low reverse transfer capacitance

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case: DFN5060-8L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0028 ounces, 0.08 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

LIMIT

UNITS

V_DS

V_GS

+20

115

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current^{(Note 1)}

Power Dissipation

T_C=25^oC

T_C=100^oC

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_A=70^oC

I_D

I_DM

460

136

Continuous Drain Current

I_D

Power Dissipation

2.0

1.3

Single Pulse Avalanche Energy^{(Note 6)}

E_AS

T_J,T_STG

R_θJC

180

-55~150

0.92

62.5

^oC

Operating Junction and Storage Temperature Range

Junction to Case

Typical Thermal resistance^{(Note 4,5)}

Junction to Ambient

^oC/W

R_θJA

 Limited only By Maximum Junction Temperature

March 23,2018-REV.02

Page 1

12 3 4 5 6 7

中文翻译

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