Datasheet > PBSS4540X-Q

PBSS4540X-Q

更新时间： 2024-11-19 17:01:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	245K
描述
40 V, 5 A NPN low VCEsat transistorProduction

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PBSS4540X-Q 数据手册

PBSS4540X-Q

40 V, 5 A NPN low VCEsat transistor

22 January 2024

Product data sheet

1. General description

NPN low V_CEsattransistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device

(SMD) plastic package.

PNP complement: PBSS5540X-Q

2. Features and benefits

•

High h_FEand low V_CEsatat high current operation

•

High collector current capability: I_Cmaximum 4 A

High efficiency leading to less heat generation

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Medium power peripheral drivers (e.g. fan and motor)

Strobe flash units for DSC and mobile phones

Inverter applications (e.g. TFT displays)

Power switch for LAN and ADSL systems

Medium power DC-to-DC conversion

Battery chargers

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

I_CM

peak collector current single pulse; t_p≤ 10 ms

R_CEsat

collector-emitter

I_C= 5 A; I_B= 500 mA; pulsed; t_p≤

mΩ

saturation resistance

300 µs; δ ≤ 0.02; T_amb= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

emitter

Simplified outline

Graphic symbol

collector

base

SOT89

sym123

12 3 4 5 6 7...13

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