PBSS5130QA

更新时间： 2024-11-18 12:33:19

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
17页	244K
描述
30 V, 1 A PNP low VCEsat (BISS) transistor

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PBSS5130QA 数据手册

PBSS5130QA

30 V, 1 A PNP low VCEsat (BISS) transistor

28 August 2013

Product data sheet

1. General description

PNP low V_CEsatBreakthrough In Small Signal (BISS) transistor in a leadless ultra small

DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

and solderable side pads.

NPN complement: PBSS4130QA.

2. Features and benefits

Very low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High collector current gain h_FEat high I_C

High energy efficiency due to less heat generation

Reduced Printed-Circuit Board (PCB) area requirements

Solderable side pads

•

AEC-Q101 qualified

3. Applications

Loadswitch

•

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-30

I_C

collector current

-1

I_CM

peak collector current t_p≤ 1 ms; pulsed

-1.5

240

R_CEsat

collector-emitter

I_C= -1 A; I_B= -100 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

160

mΩ

saturation resistance

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PBSS5130QA 替代型号

型号	品牌	替代类型	描述	数据表
PBSS5130QAZ	NXP	完全替代	PBSS5130QA - 30 V, 1 A PNP low VCEsat (BISS) transistor DFN 3-Pin

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