Datasheet > PBSS5140T-Q

PBSS5140T-Q

更新时间： 2024-11-19 15:19:27

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	264K
描述
40 V, 1 A PNP low VCEsat transistorProduction

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PBSS5140T-Q 数据手册

PBSS5140T-Q

40 V, 1 A PNP low VCEsat transistor

4 October 2023

Product data sheet

1. General description

PNP low V_CEsattransistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic

package.

NPN complement: PBSS4140T-Q

2. Features and benefits

•

Low collector-emitter saturation voltage V_CEsat

•

High collector current capability I_Cand I_CM

High collector current gain (h_FE) at high I_C

High efficiency due to less heat generation

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

General-purpose switching and muting

LCD backlighting

Supply line switching circuits

Battery-driven equipment (mobile phones, video cameras and handheld devices)

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-40

I_C

collector current

-1

I_CM

peak collector current single pulse; t_p≤ 1 ms

-2

R_CEsat

collector-emitter

saturation resistance

I_C= -500 mA; I_B= -50 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

300

500

mΩ

12 3 4 5 6 7...13

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