是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | TO-236 | 包装说明: | PLASTIC PACKAGE-3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 210 |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.48 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PBSS5140D | NXP |
获取价格 |
40 V low VCEsat PNP transistor | |
PBSS5140S | NXP |
获取价格 |
40 V low VCEsat PNP transistor | |
PBSS5140S | FOSHAN |
获取价格 |
TO-92 | |
PBSS5140T | NXP |
获取价格 |
40 V low VCEsat PNP transistor | |
PBSS5140T | NEXPERIA |
获取价格 |
40 V, 1 A PNP low VCEsat BISS transistorProduction | |
PBSS5140T | FOSHAN |
获取价格 |
SOT-23 | |
PBSS5140T,215 | NXP |
获取价格 |
PBSS5140T - 40 V, 1 A PNP low VCEsat BISS transistor TO-236 3-Pin | |
PBSS5140T/ZLR | ETC |
获取价格 |
TRANS BISS TO-236AB | |
PBSS5140T-Q | NEXPERIA |
获取价格 |
40 V, 1 A PNP low VCEsat transistorProduction | |
PBSS5140TTRL | NXP |
获取价格 |
TRANSISTOR 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, BIP General Purpose |