5秒后页面跳转
PBSS5130T,215 PDF预览

PBSS5130T,215

更新时间: 2024-11-21 19:47:15
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
11页 195K
描述
PBSS5130T - 30 V; 1 A PNP low VCEsat (BISS) transistor TO-236 3-Pin

PBSS5130T,215 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-236包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.38
最大集电极电流 (IC):1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):210
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.48 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

PBSS5130T,215 数据手册

 浏览型号PBSS5130T,215的Datasheet PDF文件第2页浏览型号PBSS5130T,215的Datasheet PDF文件第3页浏览型号PBSS5130T,215的Datasheet PDF文件第4页浏览型号PBSS5130T,215的Datasheet PDF文件第5页浏览型号PBSS5130T,215的Datasheet PDF文件第6页浏览型号PBSS5130T,215的Datasheet PDF文件第7页 
3
2
T
O
S
PBSS5130T  
30 V; 1 A PNP low VCEsat (BISS) transistor  
9 July 2013  
Product data sheet  
1. General description  
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23  
Surface-Mounted Device (SMD) plastic package.  
2. Features and benefits  
Small SMD plastic package  
Low collector-emitter saturation voltage VCEsat  
High collector current capability: IC and ICM  
Higher efficiency due to less heat generation  
AEC-Q101 qualified  
3. Applications  
DC-to-DC conversion  
Supply line switching  
Battery charger  
LCD backlighting  
Driver in low supply voltage applications (e.g. lamps and LEDs)  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-30  
V
IC  
collector current  
-
-
-
-
-
-
-1  
A
ICM  
peak collector current single pulse; tp ≤ 1 ms  
-3  
A
RCEsat  
collector-emitter  
IC = -500 mA; IB = -50 mA; pulsed;  
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C  
220  
mΩ  
saturation resistance  
Scan or click this QR code to view the latest information for this product  
 
 
 
 

与PBSS5130T,215相关器件

型号 品牌 获取价格 描述 数据表
PBSS5140D NXP

获取价格

40 V low VCEsat PNP transistor
PBSS5140S NXP

获取价格

40 V low VCEsat PNP transistor
PBSS5140S FOSHAN

获取价格

TO-92
PBSS5140T NXP

获取价格

40 V low VCEsat PNP transistor
PBSS5140T NEXPERIA

获取价格

40 V, 1 A PNP low VCEsat BISS transistorProduction
PBSS5140T FOSHAN

获取价格

SOT-23
PBSS5140T,215 NXP

获取价格

PBSS5140T - 40 V, 1 A PNP low VCEsat BISS transistor TO-236 3-Pin
PBSS5140T/ZLR ETC

获取价格

TRANS BISS TO-236AB
PBSS5140T-Q NEXPERIA

获取价格

40 V, 1 A PNP low VCEsat transistorProduction
PBSS5140TTRL NXP

获取价格

TRANSISTOR 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, BIP General Purpose