Datasheet > PBSS5112PAP

PBSS5112PAP

更新时间： 2024-02-05 16:01:01

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
17页	254K
描述
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor

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PBSS5112PAP 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.77
JESD-609代码：	e3	湿度敏感等级：	1
峰值回流温度（摄氏度）：	260	端子面层：	TIN
处于峰值回流温度下的最长时间：	30	Base Number Matches：	1

PBSS5112PAP 数据手册

PBSS5112PAP

120 V, 1 A PNP/PNP low VCEsat (BISS) transistor

30 November 2012

Product data sheet

1. Product profile

1.1 General description

PNP/PNP low V_CEsatBreakthrough In Small Signal (BISS) transistor in a leadless

medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4112PANP. NPN/NPN complement: PBSS4112PAN.

1.2 Features and benefits

Very low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High collector current gain h_FEat high I_C

Reduced Printed-Circuit Board (PCB) requirements

High energy efficiency due to less heat generation

AEC-Q101 qualified

•

1.3 Applications

Load switch

•

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

-120

I_C

collector current

-1

I_CM

peak collector current single pulse; t_p≤ 1 ms

-1.5

-7

V_EBO

emitter-base voltage

open collector

Per transistor

R_CEsat

collector-emitter

I_C= -500 mA; I_B= -50 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

440

mΩ

saturation resistance

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