Datasheet > PBSS4580PA

PBSS4580PA

更新时间： 2024-01-19 20:48:41

品牌	Logo	应用领域
恩智浦 - NXP		开关光电二极管晶体管
页数	文件大小	规格书
15页	177K
描述
80 V, 5.6 A NPN low VCEsat (BISS) transistor

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技术参数
数据手册

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PBSS4580PA 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.76
JESD-609代码：	e3	湿度敏感等级：	1
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Tin (Sn)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

PBSS4580PA 数据手册

PBSS4580PA

80 V, 5.6 A NPN low V_CEsat(BISS) transistor

Rev. 01 — 15 April 2010

Product data sheet

1. Product profile

1.1 General description

NPN low V_CEsatBreakthrough In Small Signal (BISS) transistor, encapsulated in an ultra

thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

medium power capability.

PNP complement: PBSS5580PA.

1.2 Features and benefits

Low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Exposed heat sink for excellent thermal and electrical conductivity

Leadless small SMD plastic package with medium power capability

1.3 Applications

Loadswitch

Battery-driven devices

Power management

Charging circuits

Power switches (e.g. motors, fans)

1.4 Quick reference data

Table 1.

Symbol Parameter

V_CEOcollector-emitter voltage

I_C

Quick reference data

Conditions

Min

Typ

Max

Unit

open base

collector current

5.6

I_CM

peak collector current

single pulse;

t_p≤ 1 ms

[1]

R_CEsat

collector-emitter

I_C= 5.6 A;

mΩ

saturation resistance

I_B= 280 mA

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

12 3 4 5 6 7...15

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